? semiconductor components industries, llc, 2006 february, 2006 ? rev. 2 1 publication order number: NTJD1155L/d NTJD1155L power mosfet 8 v, 1.3 a, high side load switch with level?shift, p?channel sc?88 the NTJD1155L integrates a p and n?channel mosfet in a single package. this device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. the p?channel device is specifically designed as a load switch using on semiconductor state?of?the?art trench technology. the n?channel, with an external resistor (r1), functions as a level?shift to drive the p?channel. the n?channel mosfet has internal esd protection and can be driven by logic signals as low as 1.5 v. the ntjd1 155l operates on supply lines from 1.8 to 8.0 v and can drive loads up to 1.3 a with 8.0 v applied to both v in and v on/off . features ? extremely low r ds(on) p?channel load switch mosfet ? level shift mosfet is esd protected ? low profile, small footprint package ? v in range 1.8 to 8.0 v ? on/off range 1.5 to 8.0 v ? esd rating of 3000 v ? pb?free package is available maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit input voltage (v dss , p?ch) v in 8.0 v on/off voltage (v gs , n?ch) v on/off 8.0 v continuous load curren t (note 1) stead y state t a = 25 c i l 1.3 a t a = 85 c 0.9 power dissipation (note 1) stead y state t a = 25 c p d 0.40 w t a = 85 c 0.20 pulsed load current t p = 10 s i lm 3.9 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s ?0.4 a esd rating, mil?std?883d hbm (100 pf, 1.5 k ) esd 3.0 kv lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal resistance ratings rating symbol max unit junction?to?ambient ? steady state (note 1) r ja 320 c/w junction?to?foot ? steady state (note 1) r jf 220 1. surface?mounted on fr4 board using 1 inch sq pad size (cu area = 1.127 in sq [1 oz] including traces). 1 2,3 5 6 simplified schematic sc?88 (sot?363) case 419b style 30 marking diagram te = device code m = date code = pb?free package (note: microdot may be in either location) pin assignment 3 d2 1 s1 s2 4 2 d2 g1 5 d1/g2 6 4 q2 q1 http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 8.0 v 170 m @ ?2.5 v 130 m @ ?4.5 v r ds(on) typ 1.3 a i d max v (br)dss 260 m @ ?1.8 v device package shipping ? ordering information NTJD1155Lt1 sc?88 3000/tape & reel NTJD1155Lt1g sc?88 (pb?free) 3000/tape & reel 1 te m 1 6 http://onsemi.com
NTJD1155L http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics q2 drain?to?source breakdown voltage v in v gs2 = 0 v, i d2 = 250 a ?8.0 v forward leakage current i fl v gs1 = 0 v, v ds2 = ?8.0 v t j = 25 c 1.0 a t j = 125 c 10 q1 gate?to?source leakage current i gss v ds1 = 0 v, v gs1 = 8.0 v 100 na q1 diode forward on?voltage v sd i s = ?0.4 a, v gs1 = 0 v ?0.8 ?1.1 v on characteristics on/off voltage v on/off 1.5 8.0 v q1 gate threshold voltage v gs1(th) v gs1 = v ds1 , i d = 250 a 0.4 1.0 v input voltage v in v gs1 = v ds1 , i d = 250 a 1.8 8.0 v q2 drain?to?source on resistance r ds(on) v on/off = 1.5 v v in = 4.5 v i l = 1.2 a 130 175 m v in = 2.5 v i l = 1.0 a 170 220 v in = 1.8 v i l = 0.7 a 260 320 load current i l v drop 0.2 v, v in = 5.0 v, v on/off = 1.5 v 1.0 a v drop 0.3 v, v in = 2.5 v, v on/off = 1.5 v 1.0 1 2,3 5 6 figure 1. load switch application 4 q2 q1 6 c1 c o c i r1 r2 r2 on/off v in v out load gnd components description values r1 pullup resistor typical 10 k to 1.0 * r2 optional slew?rate control typical 0 to 100 k * c o , c i output capacitance usually < 1.0 f c1 optional in?rush current control typical 1000 pf *minimum r1 value should be at least 10 x r2 to ensure q1 turn?on.
NTJD1155L http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 0.70 0.25 1.5 0.5 i l (amps) v drop (v) 0.15 0.05 0 figure 2. v drop vs. i l @ v in = 2.5 v figure 3. v drop vs. i l @ v in = 4.5 v 0.2 0.0 figure 4. on?resistance vs. input voltage v in (volts) r ds(on), drain?to?source resistance ( ) figure 5. on?resistance variation with temperature ?50 0 ?25 25 1.3 1.1 0.7 50 125 100 figure 6. normalized on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.8 t j = 125 c 75 150 r ds(on), drain?to?source resistance (normalized) 1.0 1.7 1.0 8.0 figure 7. switching variation r2 @ v in = 4.5 v, r1 = 20 k 3.0 2.5 0.4 0.10 0.20 0.30 i l = 1 a v on/off = 1.5 to 8 v t j = 25 c 0.6 1.5 08 r2 (k ) 44 0 time ( s) 28 16 24 1 t d(off) 3.0 5.0 7.0 0.06 0.01 t j , junction temperature ( c) r ds(on), drain?to?source resistance ( ) 0.31 0.16 v in = 5 v 0.21 v in = 1.8 v 0.9 56 0.45 0.40 0.35 0.50 0.55 0.60 0.65 2.0 t j = 125 c 0 0.25 1.5 0.5 i l (amps) v drop (v) 0.15 0.05 0 t j = 25 c 1.0 3. 0 2.5 0.10 0.20 0.30 0.45 0.40 0.35 0.50 2.0 t j = 125 c 2.0 4.0 6.0 ?50 0 ?25 25 50 125 100 75 15 0 0.11 0.26 v in = 5 v v in = 1.8 v i l = 1 a v on/off = 1.5 v ci = 10 f co = 1 f 37 t d(on) t r t f 40 24 12 36 20 8 32 4 i l = 1 a v on/off = 1.5 to 8 v i l = 1 a v on/off = 1.5 to 8 v 0.3 0.1 0.5 0.7
NTJD1155L http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) figure 8. switching variation r2 @ v in = 4.5 v, r1 = 20 k 08 r2 (k ) 22 0 time ( s) 14 8 24 1 t d(off) 56 i l = 1 a v on/off = 3 v ci = 10 f co = 1 f 37 t d(on) t r t f 20 12 6 18 10 4 16 2 r(t), effective transient thermal response square wave pulse duration time t, (s) 0.1 10 0.01 single pulse r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 100 1000 10 1 0.1 0.01 0.001 1 0.2 d = 0.5 0.01 0.02 0.1 0.05 normalized to r ja at steady state ( 1 inch pad) figure 9. switching variation r2 @ v in = 2.5 v, r1 = 20 k 08 r2 (k ) 0 time ( s) 28 16 24 1 t d(off) 56 i l = 1 a v on/off = 1.5 v ci = 10 f co = 1 f 37 t d(on) t r t f 40 24 12 36 20 8 32 4 figure 10. switching variation r2 @ v in = 2.5 v, r1 = 20 k 08 r2 (k ) 0 time ( s) 8 24 1 t d(off) 56 i l = 1 a v on/off = 3 v ci = 10 f co = 1 f 37 t d(on) t r t f 12 6 10 4 2 figure 11. fet thermal response
NTJD1155L http://onsemi.com 5 package dimensions sc?88 (sot?363) case 419b?02 issue w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 sc?88/sc70?6/sot363 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ?e? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 30: pin 1. source 1 2. drain 2 3. drain 2 4. source 2 5. gate 1 6. drain 1
NTJD1155L http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTJD1155L/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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